A 26–30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique

This article presents a 26–30 GHz gallium nitride (GaN) high electron mobility transistor (HEMT) low-noise amplifier (LNA) for fifth-generation base station applications. In the proposed design, series inductor-based stability enhancement technique was utilized to improve reverse isolation and performance of mitigate effect parasitic capacitance GaN HEMT device. To validate concept three-stage LNA designed fabricated in 0.15-um on silicon carbide technology. The demonstrated design achieved gain 20.2 dB, noise figure 2.4–2.5 an output 1-dB compression point 17.2 dBm, third-order intercept 32.2 dBm. also attained (? criterion) up 7.7 at operating frequency. implemented consumed power 320 mW with nominal supply 10 V.